Use of non-oxidizing strong acids for the removal of ion-implanted resist
US10347504B2 · kind B2 · utility
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83References
10Claims
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Key dates
| Filing date | Feb 9, 2018 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Feb 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0273
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively remove the ion-implanted resist material while not damaging the silicon-containing or germanium-containing materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.