Active gate contacts and method of fabrication thereof

US10347541B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Jiehui Shu · Clifton Park, US
• David Paul Brunco · Latham, US
• Pei Liu · Clifton Park, US
• Shariq Siddiqui · Albany, US
• Jinping Liu · Ballston Lake, US

Key dates

• Filing date: Apr 25, 2018
• Grant date: Jul 9, 2019
• Expiry date: Apr 25, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76883
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming contacts over active gates is provided. Embodiments include forming first and second gate structures over a portion of a fin; forming a first and second RSD in a portion of the fin between the first gate structures and between the first and the second gate structure, respectively; forming TS structures over the first and second RSD; forming a first cap layer over the first and second gate structures or over the TS structures; forming a metal oxide liner over the substrate, trenches formed; filling the trenches with a second cap layer; forming an ILD layer over the substrate; forming a CA through a first portion of the ILD and metal oxide layer down to the TS structures over the second RSD; and forming a CB through a second portion of the ILD and metal oxide layer down to the first gate structures.