Method for producing on the same transistors substrate having different characteristics
US10347545B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 19, 2017 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | May 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a method for producing on a same substrate at least one first transistor and at least one second transistor that have different characteristics, the method including producing at least one first gate pattern and at least one second gate pattern on the substrate; depositing, on the first and the second gate patterns, at least: a first protective layer, and a second protective layer overlying the first protective layer and made of a material different from that of the first protective layer; masking of the second gate pattern by a masking layer; isotropic etching of the second protective layer; removing the masking layer; and anisotropic etching of the second protective layer selectively relative to the first protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.