Suppressing interfacial reactions by varying the wafer temperature throughout deposition
US10347547B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2016 |
| Grant date | Jul 9, 2019 |
| Priority date | — |
| Expiry date | Apr 30, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67745
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.