Methods of forming integrated assemblies having dielectric regions along conductive structures

US10347643B1 · kind B1 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Guangjun Yang · Shanghai, CN
• Mohd Kamran Akhtar · Boise, US
• Silvia Borsari · Boise, US
• Alex J. Schrinsky · Boise, US

Key dates

• Filing date: Jun 7, 2018
• Grant date: Jul 9, 2019
• Expiry date: Jun 7, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/485

Abstract

Some embodiments include a method of forming an integrated assembly. A construction is formed to include a conductive structure having a top surface, and a pair of sidewall surfaces extending downwardly from the top surface. Insulative material is over the top surface, and rails are along the sidewall surfaces. The rails include sacrificial material. The sacrificial material is removed to leave openings. Sealant material is formed to extend within the openings. The sealant material has a lower dielectric constant than the insulative material. Some embodiments include an integrated assembly having a conductive structure with a top surface and a pair of opposing sidewall surfaces extending downwardly from the top surface. Insulative material is over the top surface. Voids are along the sidewall surfaces and are capped by sealant material. The sealant material has a lower dielectric constant than the insulative material.