Litho-litho-etch double patterning method
US10353288B2 · kind B2 · utility
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Key dates
| Filing date | Nov 28, 2017 |
| Grant date | Jul 16, 2019 |
| Priority date | — |
| Expiry date | Nov 28, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A litho-litho-etch double patterning method including forming a resist layer by coating a substrate with a resist composition; exposing the resist layer to a first radiant energy density of UV rays; forming a first pattern in the resist layer by developing the resist layer with a positive developer; exposing the resist layer to a second radiant energy density of UV rays; and forming a second pattern in the resist layer by developing the resist layer with a negative developer, the second pattern including one or more features of the first pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.