Patent · US Active

Ferroelectric memory cells

US10354712B2 · kind B2 · utility

70Cited by

33References

18Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Scott J. Derner · Boise, US
Christopher John Kawamura · Boise, US

Key dates

Filing date	Aug 17, 2018
Grant date	Jul 16, 2019
Priority date	—
Expiry date	Aug 17, 2038

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/2257
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Apparatuses and methods are disclosed that include ferroelectric memory cells. An example ferroelectric memory cell includes two transistors and two capacitors. Another example ferroelectric memory cell includes three transistors and two capacitors. Another example ferroelectric memory cell includes four transistors and two capacitors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.