Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the same

US10355205B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Prashant Majhi · San Jose, US
• Ravi Pillarisetty · Portland, US
• Niloy Mukherjee · Beaverton, US
• Uday Shah · Portland, US
• Elijah V. Karpov · Portland, US
• Brian S. Doyle · Portland, US
• Robert S. Chau · Beaverton, US

Key dates

• Filing date: Dec 18, 2014
• Grant date: Jul 16, 2019
• Expiry date: Jan 28, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

Resistive memory cells are described. In some embodiments, the resistive memory cells include a switching layer having an inner region in which one or more filaments is formed. In some instances, the filaments is/are formed only within the inner region of the switching layer. Methods of making such resistive memory cells and devices including such cells are also described.