Semiconductor component, method for processing a substrate and method for producing a semiconductor component
US10361096B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2017 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Aug 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/233
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In various embodiments, a method is provided. The method includes forming a metallization layer above at least one first region of a substrate. After forming the metallization layer at least one second region of the substrate is free of the metallization layer. The method further includes forming a barrier layer above the at least one first region of the substrate and above the at least one second region of the substrate. The barrier layer in the at least one first region of the substrate directly adjoins the metallization layer. The method further includes removing the barrier layer in the at least one first region of the substrate by drive-in of the barrier layer into the metallization layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.