Method for preparing substrate with carrier trapping center
US10361114B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2018 |
| Grant date | Jul 23, 2019 |
| Priority date | — |
| Expiry date | Feb 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/552
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for preparing a substrate with a carrier trapping center. The method includes: implanting bubbling ions into the semiconductor substrate to form a splitting layer, and implanting modified ions into the insulating layer to form a nano cluster; providing a supporting substrate; bonding the supporting substrate to the semiconductor substrate by using the insulating layer as an intermediate layer; performing a first heat treatment for the bonded substrate such that a splitting layer is formed at the position where the bubbling ions are implanted, and causing the semiconductor substrate to split at the position of the splitting layer; performing rapid thermal annealing for the substrate; and performing a second heat treatment for the rapidly thermally annealed semiconductor substrate to consolidate the bonding interface and form the nano cluster at the position where the modified ions are implanted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.