Semiconductor device and manufacturing method thereof

US10366991B1 · kind B1 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Hsu Ting · Tainan, TW
• Yu-Ying Lin · Tainan, TW
• Yen-Hsing Chen · Taipei, TW
• Chun-Jen Chen · Taipei, TW
• Chun-Wei Yu · Tainan, TW
• Keng-Jen Lin
• Yu-Ren Wang · Tainan, TW

Key dates

• Filing date: Jan 25, 2018
• Grant date: Jul 30, 2019
• Expiry date: Jan 25, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A semiconductor device includes a semiconductor substrate, an isolation structure, a cladding layer, and a gate structure. The semiconductor substrate includes fin shaped structures. The isolation structure is disposed between the fin shaped structures. Each of the fin shaped structures includes a first portion disposed above a top surface of the isolation structure and a second portion disposed on the first portion. A width of the second portion is smaller than a width of the first portion. The cladding layer is disposed on the first portion and the second portion of each of the fin shaped structures. The cladding layer includes a curved surface. The gate structure is disposed straddling the fin shaped structures.