Wrap around contact using sacrificial mandrel
US10367077B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2018 |
| Grant date | Jul 30, 2019 |
| Priority date | — |
| Expiry date | Apr 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor structure and a method for fabricating the same. The semiconductor structure includes a plurality of unmerged fin structures each in contact with their own source/drain. The semiconductor structure further includes a contact layer formed on sidewalls and a top surface of each source/drain. The method includes at least the following operations. At least one mandrel layer is formed adjacent to at least one fin structure. The at least one fin structure and at least one source/drain is epitaxially grown in contact with the at least one fin structure and the at least one mandrel layer. The at least one mandrel layer is removed after the at least one source/drain has been epitaxially grown. At least one contact layer is formed in contact with sidewalls and a top surface of the at least one source/drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.