Semiconductor devices with improved thermal and electrical performance

US10373897B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Ralf Otremba · Kaufbeuren, DE
• Felix Grawert · Cambridge, US
• Amirul Afiq Hud · Melaka City, MY
• Uwe Kirchner · Feldkirchen in Kärnten, AT
• Teck Sim Lee · Melaka City, MY
• Guenther Lohmann · Sattendorf, AT
• Hwee Yin Low · Melaka City, MY
• Edward Fuergut · Nuremberg, DE
• Bernd Schmoelzer · Radenthein, AT
• Fabian Schnoy · Regenstauf, DE
• Franz Stueckler · Friesach, AT

Key dates

• Filing date: Dec 13, 2016
• Grant date: Aug 6, 2019
• Expiry date: Feb 27, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/19107
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A device may include a carrier, a semiconductor chip arranged over a first surface of the carrier, and an encapsulation body comprising six side surfaces and encapsulating the semiconductor chip. A second surface of the carrier opposite to the first surface of the carrier is exposed from the encapsulation body. The device may further include electrical contact elements electrically coupled to the semiconductor chip and protruding out of the encapsulation body exclusively through two opposing side surfaces of the encapsulation body which have the smallest surface areas of all the side surfaces of the encapsulation body, and an electrically insulating layer arranged over the exposed second surface of the carrier.