Gate contact structure positioned above an active region with air gaps positioned adjacent the gate structure
US10388747B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2018 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Mar 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative integrated circuit product disclosed herein includes a transistor device comprising a T-shaped gate structure positioned above an active region defined in a semiconducting substrate, the T-shaped portion of the gate structure comprising a relatively wider upper portion and a relatively narrower lower portion, and first and second conductive source/drain structures positioned adjacent opposite sidewalls of the T-shaped gate structure. In this example, the product also includes first and second air gaps positioned adjacent opposite sidewall of the T-shaped gate structure, wherein each of the air gaps is positioned between at least the lower portion of one of the sidewalls of the T-shaped gate structure and the adjacent conductive source/drain structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.