Gate and source/drain contact structures positioned above an active region of a transistor device
US10388770B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2018 |
| Grant date | Aug 20, 2019 |
| Priority date | — |
| Expiry date | Mar 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One illustrative IC product disclosed herein includes a transistor device including a gate structure positioned above an active region, first and second conductive source/drain structures positioned adjacent opposite sidewalls of the gate structure and an insulating material positioned laterally between the gate structure and each of the first and second conductive source/drain structures. The product also includes first and second air gaps positioned adjacent opposite sidewalls of the gate structure, a gate contact structure that is positioned entirely above the active region and conductively coupled to the gate structure and a source/drain contact structure that is positioned entirely above the active region and conductively coupled to at least one of the first and second conductive source/drain structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.