Patent · US Active

Spin torque MRAM fabrication using negative tone lithography and ion beam etching

US10388857B2 · kind B2 · utility

1Cited by

6References

8Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Anthony J. Annunziata · Stamford, US
Armand A. Galan · New York, US
Steve Holmes · Cambridge, GB
Eric A. Joseph · White Plains, US
Gen P. Lauer · Mahopac, US
Qinghuang Lin · Yorktown Heights, US
Nathan P. Marchack · White Plains, US

Key dates

Filing date	Jun 16, 2016
Grant date	Aug 20, 2019
Priority date	—
Expiry date	Jun 21, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10B61/00
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A magnetoresistive memory cell includes a magnetic tunnel junction pillar having a circular cross section. The pillar has a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer. A first conductive contact is disposed above the magnetic tunnel junction pillar. A second conductive contact is disposed below the magnetic tunnel junction pillar.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.