In-situ pre-clean for selectivity improvement for selective deposition
US10395916B2 · kind B2 · utility
2Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 8, 2017 |
| Grant date | Aug 27, 2019 |
| Priority date | — |
| Expiry date | Sep 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods to selectively deposit a film on a first surface (e.g., a metal surface) relative to a second surface (e.g., a dielectric surface) by exposing the surface to a pre-clean plasma comprising one or more of argon or hydrogen followed by deposition. The first surface and the second surface can be substantially coplanar. The selectivity of the deposited film may be increased by an order of magnitude relative to the substrate before exposure to the pre-cleaning plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.