Semiconductor devices including ferroelectric materials
US10403630B2 · kind B2 · utility
3Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2018 |
| Grant date | Sep 3, 2019 |
| Priority date | — |
| Expiry date | Aug 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A method of forming a ferroelectric memory cell. The method comprises forming an electrode material exhibiting a desired dominant crystallographic orientation. A hafnium-based material is formed over the electrode material and the hafnium-based material is crystallized to induce formation of a ferroelectric material having a desired crystallographic orientation. Additional methods are also described, as are semiconductor device structures including the ferroelectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.