Memory device with oxide semiconductor static random access memory and method for operating the same
US10410684B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 21, 2018 |
| Grant date | Sep 10, 2019 |
| Priority date | — |
| Expiry date | Feb 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a memory device, the memory device includes a first region having a plurality of oxide semiconductor static random access memories (OSSRAM) arranged in a first direction, and each of the OSSRAMs comprising a static random access memory (SRAM) and at least an oxide semiconductor dynamic random access memory (DOSRAM), wherein the DOSRAM is connected to the SRAM, wherein each of the DOSRAMs comprises an oxide semiconductor gate (OSG), and each of the OSGs extending in a second direction perpendicular to the first direction, and an oxide semiconductor channel extending in the first direction, an oxide semiconductor gate connection extending in the first direction to connect each of the OSGs, and a word line, a Vcc connection line and a Vss connection line extend in the first direction and are connected to the SRAMs in each OSSRAM.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.