Inventor · Tainan, TW

Ching-Cheng Lung

17Patents

4h-index

20Co-inventors

52Inventor score

Filing activity: Sep 29, 2016 → Dec 7, 2020

Most-cited inventions

Patent	Title	Area	Cited by	Status
US9871048B1	Memory device	Electricity	5	Active
US10706914B2	Static random access memory	Physics	5	Active
US10559573B2	Static random access memory structure	Electricity	5	Active
US10068909B1	Layout pattern of a memory device formed by static random access memory	Electricity	4	Active
US10381056B2	Dual port static random access memory (DPSRAM) cell	Electricity	4	Active
US10847521B2	Layout pattern of a static random access memory	Electricity	3	Active
US10861549B1	Ternary content addressable memory unit capable of reducing charge sharing effect	Electricity	2	Active
US10153287B1	Layout pattern for static random access memory	Electricity	2	Active
US10366756B1	Control circuit used for ternary content-addressable memory with two logic units	Physics	1	Active
US10892013B2	Two-port ternary content addressable memory and layout pattern thereof, and associated memory device	Physics	1	Active
US10522551B2	Semiconductor device and semiconductor apparatus	Electricity	1	Active
US9859282B1	Semiconductor structure	Electricity	1	Active
US11170854B2	Layout pattern of two-port ternary content addressable memory	Physics	0	Active
US9947673B1	Semiconductor memory device	Electricity	0	Active
US10410684B2	Memory device with oxide semiconductor static random access memory and method for operating the same	Electricity	0	Active
US10020049B1	Six-transistor static random access memory cell and operation method thereof	Physics	0	Active
US10050044B2	Static random-access memory device	Electricity	0	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.