Inventor · Tainan, TW

Yu-Tse Kuo

46Patents
5h-index
55Co-inventors
68Inventor score

Filing activity: Nov 2, 2011 → Jun 27, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9761302B1 Static random access memory cell and manufacturing method thereof Electricity 13 Active
US9728541B1 Static random-access memory (SRAM) cell array and forming method thereof Electricity 11 Active
US9379119B1 Static random access memory Electricity 9 Active
US9698047B2 Dummy gate technology to avoid shorting circuit Electricity 7 Active
US10706914B2 Static random access memory Physics 5 Active
US9401366B1 Layout pattern for 8T-SRAM and the manufacturing method thereof Electricity 5 Active
US10559573B2 Static random access memory structure Electricity 5 Active
US9871048B1 Memory device Electricity 5 Active
US9786647B1 Semiconductor layout structure Electricity 4 Active
US10068909B1 Layout pattern of a memory device formed by static random access memory Electricity 4 Active
US10381056B2 Dual port static random access memory (DPSRAM) cell Electricity 4 Active
US10529723B2 Layout pattern for static random access memory Electricity 3 Active
US10847521B2 Layout pattern of a static random access memory Electricity 3 Active
US11475953B1 Semiconductor layout pattern and forming method thereof Electricity 2 Active
US10026726B2 Dummy gate technology to avoid shorting circuit Electricity 2 Active
US10861549B1 Ternary content addressable memory unit capable of reducing charge sharing effect Electricity 2 Active
US10153287B1 Layout pattern for static random access memory Electricity 2 Active
US10522551B2 Semiconductor device and semiconductor apparatus Electricity 1 Active
US9859282B1 Semiconductor structure Electricity 1 Active
US10366756B1 Control circuit used for ternary content-addressable memory with two logic units Physics 1 Active
US9953988B2 Method of forming static random-access memory (SRAM) cell array Electricity 1 Active
US9941288B2 Static random-access memory (SRAM) cell array Electricity 1 Active
US10892013B2 Two-port ternary content addressable memory and layout pattern thereof, and associated memory device Physics 1 Active
US9947674B2 Static random-access memory (SRAM) cell array Electricity 1 Active
US11943935B2 Layout pattern of magnetoresistive random access memory Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.