Hybrid carbon hardmask for lateral hardmask recess reduction

US10410864B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Thomas Jongwan Kwon · Dublin, US
• Rui Cheng · San Jose, US
• Abhijit Basu Mallick · Palo Alto, US
• Er-Xuan Ping · Boise, US
• Jaesoo Ahn · San Jose, US

Key dates

• Filing date: May 24, 2018
• Grant date: Sep 10, 2019
• Expiry date: May 24, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02271
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Implementations of the present disclosure relate to improved hardmask materials and methods for patterning and etching of substrates. A plurality of hardmasks may be utilized in combination with patterning and etching processes to enable advanced device architectures. In one implementation, a first hardmask and a second hardmask disposed on a substrate having various material layers disposed thereon. The second hardmask may be utilized to pattern the first hardmask during a first etching process. A third hardmask may be deposited over the first and second hardmasks and a second etching process may be utilized to form channels in the material layers.