Methods of forming self-aligned vias

US10410865B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• David Thompson · San Jose, US
• Benjamin Schmiege · Santa Clara, US
• Jeffrey W. Anthis · San Jose, US
• Abhijit Basu Mallick · Palo Alto, US
• Susmit Singha Roy · Mountain View, US
• Ziqing Duan · Sunnyvale, US
• Yihong Chen · San Jose, US
• Kelvin Chan · San Ramon, US
• Srinivas Gandikota · Santa Clara, US

Key dates

• Filing date: Sep 12, 2018
• Grant date: Sep 10, 2019
• Expiry date: Sep 12, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76897
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.