Method of manufacturing a semiconductor device

US10418319B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Oliver Haeberlen · Villach, AT
• Klaus Schiess · Allensbach, DE
• Stefan Kramp · Villach, AT

Key dates

• Filing date: May 14, 2013
• Grant date: Sep 17, 2019
• Expiry date: May 14, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/14
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of manufacturing a semiconductor device includes providing an electrically conductive carrier and placing a semiconductor chip over the carrier. The method includes applying an electrically insulating layer over the carrier and the semiconductor chip. The electrically insulating layer has a first face facing the carrier and a second face opposite to the first face. The method includes selectively removing the electrically insulating layer and applying solder material where the electrically insulating layer is removed and on the second face of the electrically insulating layer.