Si precursors for deposition of SiN at low temperatures
US10424477B2 · kind B2 · utility
282Cited by
32References
24Claims
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Key dates
| Filing date | Sep 13, 2017 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Sep 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.