Atomic layer etching processes
US10424487B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2017 |
| Grant date | Sep 24, 2019 |
| Priority date | — |
| Expiry date | Oct 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68742
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Processing methods may be performed to remove unwanted materials from a substrate. The methods may include forming a remote plasma of an inert precursor in a remote plasma region of a processing chamber. The methods may include forming a bias plasma of the inert precursor within a processing region of the processing chamber. The methods may include modifying a surface of an exposed material on a semiconductor substrate within the processing region of the processing chamber with plasma effluents of the inert precursor. The methods may include extinguishing the bias plasma while maintaining the remote plasma. The methods may include adding an etchant precursor to the remote plasma region to produce etchant plasma effluents. The methods may include flowing the etchant plasma effluents to the processing region of the processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.