Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
US10431283B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2018 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Sep 14, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5657
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatuses and methods are disclosed that include ferroelectric memory and for accessing ferroelectric memory. An example method includes increasing a voltage of a first cell plate of a capacitor to change the voltage of a second cell plate of the capacitor, a second digit line, and a second sense node. The voltage of the second cell plate and the second digit line is decreased to change the voltage of the first cell plate, a first digit line, and a first sense node. The first node is driven to a first voltage and the second node is driven to a second voltage responsive to the voltage of the first node being greater than the second node. The first node is driven to the second voltage and the second node is driven to the first voltage responsive to the voltage of the first node being less than the second node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.