Multi-step insulator formation in trenches to avoid seams in insulators
US10431500B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2018 |
| Grant date | Oct 1, 2019 |
| Priority date | — |
| Expiry date | Mar 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods produce integrated circuit structures that include (among other components) fins extending from a first layer, source/drain structures on the fins, source/drain contacts on the source/drain structures, an insulator on the source/drain contacts defining trenches between the source/drain contacts, gate conductors in a lower portion of the trenches adjacent the fins, a first liner material lining a middle portion and an upper portion of the trenches, a fill material in the middle portion of the trenches, and a second material in the upper portion of the trenches. The first liner material is on the gate conductors in the trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.