Shielded MRAM cell
US10439129B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 18, 2018 |
| Grant date | Oct 8, 2019 |
| Priority date | — |
| Expiry date | Jan 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
One illustrative integrated circuit (IC) product disclosed herein includes an MRAM cell, the MRAM cell having an outer perimeter, wherein the MRAM cell comprises a bottom electrode, a top electrode and an MTJ (Magnetic Tunnel Junction) element positioned above the bottom electrode and below the top electrode. In this example, the IC product also includes an insulating material positioned around the outer perimeter of the MRAM cell and a conductive sidewall spacer comprised of a metal-containing shielding material positioned around the outer perimeter of the MRAM cell, wherein the insulating material is positioned between the conductive sidewall spacer and the MRAM cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.