Apparatus and method to control etch rate through adaptive spiking of chemistry
US10446387B2 · kind B2 · utility
0Cited by
8References
23Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 3, 2017 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | May 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus and method are provided to: determine a unique profile to etch each wafer, execute that etch, and determine and deliver the proper chemical addition in order to maintain etch rate within tight tolerances.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.