Metal-insulator-metal capacitors with enlarged contact areas
US10446483B2 · kind B2 · utility
7Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2018 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Jan 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76805
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures that include a metal-insulator-metal (MIM) capacitor and methods for fabricating a structure that includes a MIM capacitor. The MIM capacitor includes a first electrode, a second electrode, and a third electrode. A conductive via is arranged in a via opening extending in a vertical direction through at least the first electrode. The first electrode has a surface arranged inside the via opening in a plane transverse to the vertical direction, and the conductive via contacts the first electrode over an area of the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.