Interconnect structure
US10446489B2 · kind B2 · utility
0Cited by
2References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2018 |
| Grant date | Oct 15, 2019 |
| Priority date | — |
| Expiry date | Oct 25, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.