Method of selective vertical growth of a dielectric material on a dielectric substrate
US10453681B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2018 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Apr 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/321
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention describe methods for selective vertical growth of dielectric material on a dielectric substrate. According to one embodiment, the method includes providing a planarized substrate containing a first material having a recessed feature that is filled with a second material, selectively depositing a graphene layer on the second material relative to the first material, selectively depositing a SiO2 film on the first material relative to the graphene layer, and removing the graphene layer from the substrate. According to one embodiment, the first material includes a dielectric material and the second material includes a metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.