Methods for forming semiconductor devices and semiconductor device

US10453806B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Joachim Hirschler · Villach, AT
• Christoffer Erbert · Duel, AT
• Markus Heinrici · Klagenfurt, AT
• Mathias Plappert · Finkenstein, AT
• Caterina Travan · Munich, DE

Key dates

• Filing date: Nov 14, 2017
• Grant date: Oct 22, 2019
• Expiry date: Jan 25, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/3171
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for forming a semiconductor device and semiconductor device is disclosed. In one example, the method includes forming a silicone layer on a semiconductor die. The method further includes plasma treating a silicone surface of the silicone layer. A surfactant is deposited on the plasma-treated silicone surface of the silicone layer to obtain a silicone surface at least partly covered by surfactant. A mold is formed on the silicone surface at least partly covered by surfactant. The surfactant includes surfactant molecules comprising an inorganic skeleton terminated by organic compounds.