Semiconductor device including resonant tunneling diode structure having a superlattice
US10453945B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2017 |
| Grant date | Oct 22, 2019 |
| Priority date | — |
| Expiry date | Oct 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/85
Abstract
A semiconductor device may include at least one double-barrier resonant tunneling diode (DBRTD). The at least one DBRTD may include a first doped semiconductor layer and a first barrier layer on the first doped semiconductor layer and including a superlattice. The superlattice may include stacked groups of layers, each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one DBRTD may further include an intrinsic semiconductor layer on the first barrier layer, a second barrier layer on the intrinsic semiconductor layer, and a second doped semiconductor layer on the second superlattice layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.