Method for processing semiconductor device
US10460925B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2017 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Nov 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0245
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing a semiconductor device is provided. The semiconductor device includes a protruding structure on a substrate, the protruding structure having a nitride spacer at a sidewall, and an epitaxial layer is formed in the substrate adjacent to the protruding structure. The method includes removing the nitride spacer on the protruding structure. Then, a dilute hydrofluoric (DHF) cleaning process is performed over the substrate, wherein a top surficial portion of the epitaxial layer is removed. A standard clean (SC) process is performed over the substrate, wherein a native oxide layer is formed on an expose surface of the epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.