Anti-reflective coating cleaning and post-etch residue removal composition having metal, dielectric and nitride compatibility
US10460954B2 · kind B2 · utility
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3References
18Claims
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Key dates
| Filing date | Jun 2, 2015 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Jun 2, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.