Removal method and processing method
US10460988B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2017 |
| Grant date | Oct 29, 2019 |
| Priority date | — |
| Expiry date | Jan 12, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A removal method is provided for selectively removing a plurality of types of metal oxide films in a plurality of recesses formed in a substrate that is arranged in a processing chamber. The removal method includes repeatedly performing process steps of exposing the plurality of types of metal oxide films to BCl3 gas or a BCl3 gas plasma generated by introducing BCl3 gas, stopping introduction of the BCl3 gas and performing a purge process, exposing the plurality of types of metal oxide films and/or a plurality of types of metal films underneath the metal oxide films to one or more different plasmas, at least one of which is generated by introducing a single gas of an inert gas, and stopping introduction of the inert gas and performing the purge process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.