Reaction system for growing a thin film
US10468291B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2016 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Mar 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/68742
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.