Self-aligned single diffusion break isolation with reduction of strain loss
US10468481B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jan 19, 2018 |
| Grant date | Nov 5, 2019 |
| Priority date | — |
| Expiry date | Jan 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A methodology for forming a single diffusion break structure in a FinFET device involves localized, in situ oxidation of a portion of a semiconductor fin. Fin oxidation within a fin cut region may be preceded by the formation of epitaxial source/drain regions over the fin, as well as by a gate cut module, where portions of a sacrificial gate that straddle the fin are replaced by an isolation layer. Localized oxidation of the fin enables the stress state in adjacent, un-oxidized portions of the fin to be retained, which may beneficially impact carrier mobility and hence conductivity within channel portions of the fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.