Low resistance contact for transistors

US10468491B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Lawrence A. Clevenger · Saratoga Springs, US
• Junli Wang · Slingerlands, US
• Kirk D. Peterson · Jericho, US
• Baozhen Li · South Bend, US
• Terry A. Spooner · Clifton Park, US
• John E. Sheets, II · Zumbrota, US

Key dates

• Filing date: Jul 3, 2018
• Grant date: Nov 5, 2019
• Expiry date: Jul 3, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/021
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

According to an embodiment of the present invention, a method for forming contacts includes forming an oxide layer over and along a first liner layer. A first spacer layer is formed along the first liner layer opposing the oxide layer. A work function metal layer is formed along the first spacer layer opposing the first liner layer. A gate is formed on and along the work function metal opposing the first spacer. A second spacer layer is formed on the oxide layer. Portions of the oxide layer, the first liner layer, the first spacer, the work function metal layer and the second spacer layer are removed which forms a recess between the gate and the first spacer layer. A second liner layer is deposited in the recess. A low-resistance metal is deposited in the removed portions to form the first contact.