Selective deposition of metal silicides

US10475655B2 · kind B2 · utility

Assignees

• Applied Materials, Inc. · US
• The Regents of the University of California · US

Inventors

• Raymond Hung · Palo Alto, US
• Namsung Kim · Yongin-si, KR
• Srinivas D. Nemani · Sunnyvale, US
• Ellie Yieh · San Jose, US
• Jong Hun Choi · Incheon, KR
• Christopher Ahles · San Diego, US
• Andrew C. Kummel · San Diego, US

Key dates

• Filing date: May 24, 2018
• Grant date: Nov 12, 2019
• Expiry date: May 24, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/324
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate.