Method for fabricating a magnetic tunneling junction (MTJ) structure
US10475987B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2018 |
| Grant date | Nov 12, 2019 |
| Priority date | — |
| Expiry date | May 1, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an improved magnetic tunneling junction (MTJ) structure is described. A bottom electrode is provided on a substrate. A MTJ stack is deposited on the bottom electrode. A top electrode is deposited on the MTJ stack. A first stress modulating layer is deposited between the bottom electrode and the MTJ stack, or a second stress modulating layer is deposited between the MTJ stack and the top electrode, or both a first stress modulating layer is deposited between the bottom electrode and the MTJ stack and a second stress modulating layer is deposited between the MTJ stack and the top electrode. The top electrode and MTJ stack are patterned and etched to form a MTJ device. The stress modulating layers reduce crystal growth defects and interfacial defects during annealing and improve the interface lattice epitaxy. This will improve device performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.