Resistive RAM memory cell
US10482957B2 · kind B2 · utility
0Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | May 11, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The disclosure relates to a memory cell comprising a resistive RAM memory element and a selection transistor, in which the memory element is positioned on a flank of the selection transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.