Beam profiling speed enhancement for scanned beam implanters
US10483086B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2015 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Dec 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31703
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implantation system and method are provided where an ion beam is tuned to a first process recipe. The ion beam is scanned along a scan plane at a first frequency, defining a first scanned ion beam. A beam profiling apparatus is translated through the first scanned ion beam and one or more properties of the first scanned ion beam are measured across a width of the first scanned ion, thus defining a first beam profile associated with the first scanned ion beam. The ion beam is then scanned at a second frequency, thus defining a second scanned ion beam, wherein the second frequency is less than the first frequency. A second beam profile associated with the second scanned ion beam is determined based, at least in part, on the first beam profile. Ions are subsequently implanted into a workpiece via the second scanned ion beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.