Methods for high precision plasma etching of substrates
US10483127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Nov 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.