Patent · US Active

Overlay structures

US10483214B2 · kind B2 · utility

0Cited by
7References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 3, 2018
Grant dateNov 19, 2019
Priority date
Expiry dateJan 3, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2223/54466
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to overlay structures and methods of manufacture. The method includes locating a first plurality of offset dummy features in a first layer; locating a second plurality of offset dummy features in a second layer; measuring a distance between the first plurality of offset dummy features and the second plurality of offset dummy features; and determining that the first layer or the second layer is shifted with respect to one another based on the measurement.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.