Patent · US Active

Semiconductor devices with through silicon vias and package-level configurability

US10483241B1 · kind B1 · utility

6Cited by
2References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 27, 2018
Grant dateNov 19, 2019
Priority date
Expiry dateJun 27, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D89/921
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device assembly includes a substrate and a die coupled to the substrate, the die including a first contact pad electrically coupled to a first circuit on the die including an active circuit element, a first TSV electrically coupling the first contact pad to a first backside contact pad, and a second contact pad electrically coupled to a second circuit including only passive circuit elements. The substrate includes a substrate contact electrically coupled to the first and second contact pads. The assembly can further include a second die including a third contact pad electrically coupled to a third circuit including a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad, but electrically disconnected from the fourth contact pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.