Magnetoresistive stack with seed region and method of manufacturing the same
US10483320B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2018 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Nov 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive stack/structure and method of manufacturing same comprising wherein the stack/structure includes a seed region, a fixed magnetic region disposed on and in contact with the seed region, a dielectric layer(s) disposed on the fixed magnetic region and a free magnetic region disposed on the dielectric layer(s). In one embodiment, the seed region comprises an alloy including nickel and chromium having (i) a thickness greater than or equal to 40 Angstroms (+/−10%) and less than or equal to 60 Angstroms (+/−10%), and (ii) a material composition or content of chromium within a range of 25-60 atomic percent (+/−10%) or 30-50 atomic percent (+/−10%).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.