Forming non-line-of-sight source drain extension in an NMOS FINFET using n-doped selective epitaxial growth
US10483355B2 · kind B2 · utility
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3References
11Claims
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Key dates
| Filing date | Oct 24, 2017 |
| Grant date | Nov 19, 2019 |
| Priority date | — |
| Expiry date | Oct 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.